Effects of series and parallel resistances on the C-V characteristics of silicon-based metal oxide semiconductor (MOS) devices
Crossref DOI link: https://doi.org/10.1140/epjp/i2015-15080-x
Published Online: 2015-04-28
Published Print: 2015-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Omar, Rejaiba
Mohamed, Ben Amar
Adel, Matoussi
Text and Data Mining valid from 2015-04-01