Study of various technological parameters on the C-Vg and the G-Vg characteristics of MOS structures
Crossref DOI link: https://doi.org/10.1140/epjp/i2016-16281-5
Published Online: 2016-08-16
Published Print: 2016-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Rejaiba, Omar
BraƱa, Alejandro F.
Matoussi, Adel
License valid from 2016-08-01