A novel passivation process of silicon nanowires by a low-cost PECVD technique for deposition of hydrogenated silicon nitride using SiH4 and N2 as precursor gases
Crossref DOI link: https://doi.org/10.1140/epjp/i2017-11383-2
Published Online: 2017-03-08
Published Print: 2017-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Bouaziz, Lamia http://orcid.org/0000-0002-9263-9391
Dridi, Donia
Karyaoui, Mokhtar
Angelova, Todora
Sanchez Plaza, Guillermo
Chtourou, Radhouane
License valid from 2017-03-01