Erratum to: Study of various technological parameters on the C-Vg and the G-Vg characteristics of MOS structures
Crossref DOI link: https://doi.org/10.1140/epjp/i2017-11433-9
Published Online: 2017-03-31
Published Print: 2017-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Rejaiba, Omar
BraƱa, Alejandro F.
Matoussi, Adel
License valid from 2017-03-01