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Layer-engineered I-V characteristics of p-Si/WS2 Van der Waals Heterostructure diode

Crossref DOI link: https://doi.org/10.1140/epjp/i2017-11480-2

Published Online: 2017-04-26

Published Print: 2017-04

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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