High breakdown voltage and high driving current in a novel silicon-on-insulator MESFET with high- and low-resistance boxes in the drift region
Crossref DOI link: https://doi.org/10.1140/epjp/i2018-12047-5
Published Online: 2018-06-12
Published Print: 2018-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Naderi, Ali
Mohammadi, Hamed
Text and Data Mining valid from 2018-06-01
Article History
Received: 4 November 2017
Accepted: 3 May 2018
First Online: 12 June 2018