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Investigation of 4H-SiC gate-all-around cylindrical nanowire junctionless MOSFET including negative capacitance and quantum confinements

Crossref DOI link: https://doi.org/10.1140/epjp/s13360-021-01787-0

Published Online: 2021-07-29

Published Print: 2021-07

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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