A capacitance model for threshold voltage computation of double-insulating fully-depleted silicon-on-diamond MOSFET
Crossref DOI link: https://doi.org/10.1140/epjp/s13360-023-04758-9
Published Online: 2023-12-18
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Daghighi, Arash
Dadkhah, Afshin
Text and Data Mining valid from 2023-12-18
Version of Record valid from 2023-12-18
Article History
Received: 5 August 2023
Accepted: 29 November 2023
First Online: 18 December 2023
Declarations
:
: The authors declare that they have no conflict of interest.