Exploration of n- and p-type doping for two-dimensional gallium nitride: charged defect calculation with first principles
Crossref DOI link: https://doi.org/10.1140/epjb/e2020-10166-6
Published Online: 2020-08-05
Published Print: 2020-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Liu, Xuefei
Yang, Xin
Yang, Xiuzhang
Lv, Bing
Luo, Zijiang
Text and Data Mining valid from 2020-08-01
Version of Record valid from 2020-08-01
Article History
Received: 31 March 2020
Revised: 7 May 2020
First Online: 5 August 2020