Analysis of emission properties of intermixed InGaN/GaN quantum wells using a concentration-dependent interdiffusion model
Crossref DOI link: https://doi.org/10.1140/epjd/e2019-100102-6
Published Online: 2019-12-17
Published Print: 2019-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Susilo, Tri Bagus
Khan, Irfan
Alsunaidi, Mohammad A.
Text and Data Mining valid from 2019-12-01
Version of Record valid from 2019-12-01
Article History
Received: 23 February 2019
Revised: 8 November 2019
First Online: 17 December 2019