Shifted gate electrode of silicon on insulator metal semiconductor FETs to amend the breakdown and transconductance
Crossref DOI link: https://doi.org/10.1140/epjp/s13360-021-01661-z
Published Online: 2021-06-17
Published Print: 2021-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Naderi, Ali http://orcid.org/0000-0001-9891-9805
Mohammadi, Hamed
Text and Data Mining valid from 2021-06-01
Version of Record valid from 2021-06-01
Article History
Received: 13 January 2021
Accepted: 9 June 2021
First Online: 17 June 2021