Document is current

Any future updates will be listed below

Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate

Crossref DOI link: https://doi.org/10.1186/1556-276X-9-505

Published Online: 2014-09-16

Published Print: 2014-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

About CrossMark