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Leakage Current Mechanism of InN-Based Metal-Insulator-Semiconductor Structures with Al2O3 as Dielectric Layers

Crossref DOI link: https://doi.org/10.1186/s11671-016-1232-0

Published Online: 2016-01-13

Published Print: 2016-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Wang, X.

Zhang, G. Z.

Xu, Y.

Gan, X. W.

Chen, C.

Wang, Z.

Wang, Y.

Wang, J. L.

Wang, T.

Wu, H.

Liu, C.
Funding

Funding for this research was provided by:

National Natural Science Foundation of China (11175135)

National Natural Science Foundation of China (J1210061)
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