Power- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access Memory
Crossref DOI link: https://doi.org/10.1186/s11671-016-1572-9
Published Online: 2016-08-12
Published Print: 2016-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kim, Sungjun
Park, Byung-Gook
Funding for this research was provided by:
National Research Foundation of Korea (2015R1A2A1A01007307)
License valid from 2016-08-12