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Influence of Surface Passivation on AlN Barrier Stress and Scattering Mechanism in Ultra-thin AlN/GaN Heterostructure Field-Effect Transistors

Crossref DOI link: https://doi.org/10.1186/s11671-016-1591-6

Published Online: 2016-08-23

Published Print: 2016-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Lv, Y. J. https://orcid.org/0000-0002-9207-8344
Song, X. B.

Wang, Y. G.

Fang, Y. L.

Feng, Z. H.
Funding

Funding for this research was provided by:

National Natural Science Foundation of China (61306113)
License Information

License valid from 2016-08-23