Retention Model of TaO/HfO x and TaO/AlO x RRAM with Self-Rectifying Switch Characteristics
Crossref DOI link: https://doi.org/10.1186/s11671-017-2179-5
Published Online: 2017-06-13
Published Print: 2017-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Lin, Yu-De
Chen, Pang-Shiu
Lee, Heng-Yuan
Chen, Yu-Sheng
Rahaman, Sk. Ziaur
Tsai, Kan-Hsueh
Hsu, Chien-Hua
Chen, Wei-Su
Wang, Pei-Hua
King, Ya-Chin
Lin, Chrong Jung
Funding for this research was provided by:
Industrial Technology Research Institute
License valid from 2017-06-13