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Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer

Crossref DOI link: https://doi.org/10.1186/s11671-018-2534-1

Published Online: 2018-04-27

Published Print: 2018-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Tan, Qiuhong

Wang, Qianjin

Liu, Yingkai

Yan, Hailong

Cai, Wude

Yang, Zhikun
Funding

Funding for this research was provided by:

National Natural Science Foundation of China (61564010)

National Natural Science Foundation of China (11304273)

National Natural Science Foundation of China (U1304108)

Applied Basic Research Foundation of Yunnan Province (2013FA035)

Applied Basic Research Foundation of Yunnan Province (2014FD017)

Yunnan Provincial Science and Technology Department (2012HA007)
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Article History

Received: 23 October 2017

Accepted: 16 April 2018

First Online: 27 April 2018

Competing interests

: The authors declare that they have no competing interests.

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