Zhao, Yue
Zhang, Jin-Chuan
Cheng, Feng-Min
Wang, Dong-Bo
Liu, Chuan-Wei
Zhuo, Ning
Zhai, Shen-Qiang
Wang, Li-Jun
Liu, Jun-Qi
Liu, Shu-Man
Liu, Feng-Qi
Wang, Zhan-Guo
Funding for this research was provided by:
National Basic Research Program of China (2017YFB0405303, 2016YFB0402303)
National Natural Science Foundation of China (61790583, 61574136, 61435014, 61774146, 61674144)
Beijing Municipal Natural Science Foundation (4172060)
Article History
Received: 3 April 2018
Accepted: 25 June 2018
First Online: 9 July 2018
Authors’ Information
: FQL is a professor in Key Laboratory of Semiconductor Materials Science at the Institute of Semiconductors, Chinese Academy of Sciences. He earned his MSc degree in Solid State Physics at University of Science and Technology China in 1990 and obtained his Ph.D. degree in the Department of Physics Nanjing University in 1996. He has studied quantum cascade laser since 1996 using a solid-source MBE in Beijing and realized a laser emitting at 5.1 μm in the end of 1999 and the room temperature operated quantum cascade laser emitting at ~ 3.54 μm in 2000. Recently, he has demonstrated the quantum dot cascade laser by two-step strain-compensation active region and material grown technique. He is a winner of the National Outstanding Youth Fund in China.
: The authors declare that they have no competing interests.
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