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Conversion of Multi-layered MoTe2 Transistor Between P-Type and N-Type and Their Use in Inverter

Crossref DOI link: https://doi.org/10.1186/s11671-018-2721-0

Published Online: 2018-09-21

Published Print: 2018-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Liu, Junku https://orcid.org/0000-0002-4902-4658
Wang, Yangyang

Xiao, Xiaoyang

Zhang, Kenan

Guo, Nan

Jia, Yi

Zhou, Shuyun

Wu, Yang

Li, Qunqing

Xiao, Lin
Funding

Funding for this research was provided by:

National Natural Science Foundation of China (51502337)

National Natural Science Foundation of China (11574171)

National Natural Science Foundation of China (51472019)

Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics (KF201509)
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Article History

Received: 15 August 2018

Accepted: 14 September 2018

First Online: 21 September 2018

Competing Interests

: The authors declare that they have no competing interests.

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