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Conversion of Multi-layered MoTe2 Transistor Between P-Type and N-Type and Their Use in Inverter

Crossref DOI link: https://doi.org/10.1186/s11671-018-2721-0

Published Online: 2018-09-21

Published Print: 2018-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Liu, Junku https://orcid.org/0000-0002-4902-4658
Wang, Yangyang

Xiao, Xiaoyang

Zhang, Kenan

Guo, Nan

Jia, Yi

Zhou, Shuyun

Wu, Yang

Li, Qunqing

Xiao, Lin
Funding

Funding for this research was provided by:

National Natural Science Foundation of China (51502337, 11574171, 51472019)

Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics (KF201509)
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Article History

Received: 15 August 2018

Accepted: 14 September 2018

First Online: 21 September 2018

Competing Interests

: The authors declare that they have no competing interests.

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