Funding for this research was provided by:
Natural Science Foundation of Liaoning Province (201602541, 201602546)
Article History
Received: 15 October 2018
Accepted: 27 January 2019
First Online: 4 February 2019
Authors’ Information
: Xi Liu received the B.S. and M.S. degrees in applied mathematics from Dalian University of Technology, Dalian, China, in 2004 and 2006, respectively. She received the Ph.D. degree in semiconductor and display engineering from Kyungpook National University, Daegu, Korea, in 2010. She works in the School of Information Science and Engineering, Shenyang University of Technology as an associate professor. Her research interests include design and optimization of advanced integrated circuits and semiconductor devices.Zhengliang Xia is currently working toward the M.S. degree in the School of Information Science and Engineering, Shenyang University of Technology, Shenyang, China. His research interests include design and optimization of MOSFETs and tunneling FETs.Xiaoshi Jin received the B.S. degree in physics from Dalian University of Technology, Dalian, China, in 2004, the M.S. degree in physics from Gyeongsang National University, Jinju, Korea, in 2006 and the Ph.D. degree in semiconductor and display engineering from Kyungpook National University, Daegu, Korea, in 2010. He works in the School of Information Science and Engineering, Shenyang University of Technology as an associate professor. He has authored or coauthored more than 30 papers published in refereed journals and has been granted more than 20 patents in this area His research interests include semiconductor physics and device modeling, design of advanced semiconductor devices and ICs.Jong-Ho Lee received the Ph.D. degree from Seoul National University, Seoul, in 1993, in electronic engineering. In 1994, he was with the School of Electrical Engineering, Wonkwang University, Iksan, Chonpuk, Korea. In 2002, he moved to Kyungpook National University, Daegu Korea, as a Professor of the School of Electrical Engineering and Computer Science. Since September 2009, he has been a Professor in the School of Electrical Engineering, Seoul National University, Seoul Korea. From August 1998 to July 1999, he was with Massachusetts Institute of Technology, Cambridge, as a postdoctoral fellow. He has authored or coauthored more than 200 papers published in refereed journals and over 280 conference papers related to his research and has been granted more than 100 patents in this area. His research interests include CMOS technology, non-volatile memory devices, thin film transistors, sensors, bio interface, and neuromorphic technology. He has been served as a subcommittee member of IEDM, ITRS ERD member, a general chair of IPFA2011, and IEEE EDS Korea chapter chair. In 2006, he was a recipient of the “This Month’s Scientist Award” for his contribution in the development of practical highdensity/high-performance 3-dimensional nano-scale CMOS devices. He invented Saddle FinFET (or recess FinFET) for DRAM cell and NAND flash cell string with virtual source/drain, which have been applying for mass production.
: All authors declare that they have no competing interests.
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