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Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition

Crossref DOI link: https://doi.org/10.1186/s11671-019-2885-2

Published Online: 2019-03-11

Published Print: 2019-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Feng, Yulin

Huang, Peng

Zhou, Zheng

Ding, Xiangxiang

Liu, Lifeng

Liu, Xiaoyan

Kang, Jinfeng
Funding

Funding for this research was provided by:

National Key Research and Development Program (2017YFB0405602)

National Natural Science Foundation of China (61874006)

National Natural Science Foundation of China (61421005)

National Natural Science Foundation of China (61334007)
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Article History

Received: 28 December 2018

Accepted: 31 January 2019

First Online: 11 March 2019

Competing Interests

: The authors declare that they have no competing interests.

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