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Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence

Crossref DOI link: https://doi.org/10.1186/s11671-019-2919-9

Published Online: 2019-03-12

Published Print: 2019-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Xing, Yao https://orcid.org/0000-0002-2335-7972
Zhao, Degang

Jiang, Desheng

Liu, Zongshun

Zhu, Jianjun

Chen, Ping

Yang, Jing

Liang, Feng

Liu, Shuangtao

Zhang, Liqun
Funding

Funding for this research was provided by:

National Key R&D Program of China (2016YFB0400803 and 2016YFB0401801)

National Natural Science Foundation of China (61674138, 61674139, 61604145, 61574135, 61574134, 61474142, 61474110, 61377020, and 61376089)

Science Challenge Project (TZ2016003)
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Article History

Received: 17 November 2018

Accepted: 28 February 2019

First Online: 12 March 2019

Authors’ Information

: Not applicable.

: The authors declare that they have no competing interests.

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