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Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory

Crossref DOI link: https://doi.org/10.1186/s11671-019-2956-4

Published Online: 2019-05-09

Published Print: 2019-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Ding, Xiangxiang

Feng, Yulin

Huang, Peng

Liu, Lifeng

Kang, Jinfeng
Funding

Funding for this research was provided by:

National Key Research and Development Program (2017YFB0405602)

National Natural Science Foundation of China (61421005)

National Natural Science Foundation of China (61874006)

National Natural Science Foundation of China (61334007)
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Text and Data Mining valid from 2019-05-09
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Article History

Received: 31 December 2018

Accepted: 22 March 2019

First Online: 9 May 2019

Competing Interests

: The authors declare that they have no competing interests.

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