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Ge pMOSFETs with GeOx Passivation Formed by Ozone and Plasma Post Oxidation

Crossref DOI link: https://doi.org/10.1186/s11671-019-2958-2

Published Online: 2019-04-05

Published Print: 2019-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Xu, Yang

Han, Genquan https://orcid.org/0000-0001-5140-4150
Liu, Huan

Wang, Yibo

Liu, Yan

Ao, Jinping

Hao, Yue
Funding

Funding for this research was provided by:

National Natural Science Foundation of China (61534004)

National Natural Science Foundation of China (61604112)

National Natural Science Foundation of China (61874081)

National Natural Science Foundation of China (61622405)

National Natural Science Foundation of China (61851406)
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Article History

Received: 4 January 2019

Accepted: 26 March 2019

First Online: 5 April 2019

Competing Interests

: The authors declare that they have no competing interests.

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