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Strong Valence Electrons Dependent and Logical Relations of Elemental Impurities in 2D Binary Semiconductor: a Case of GeP3 Monolayer from Ab Initio Studies

Crossref DOI link: https://doi.org/10.1186/s11671-019-3135-3

Published Online: 2019-09-09

Published Print: 2019-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Zhang, Suihao

Li, Rui

Fu, Xiaonan

Zhao, Yu

Niu, Chunyao

Li, Chong

Zeng, Zaiping

Wang, Songyou

Xia, Congxin

Jia, Yu
Funding

Funding for this research was provided by:

National Natural Science Foundation of China (No. 11774078, No. 11804077)

Innovation Scientists and Technicians Troop Construction Projects of Henan Province (No. 10094100510025)
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Text and Data Mining valid from 2019-09-09

Version of Record valid from 2019-09-09
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Article History

Received: 20 June 2019

Accepted: 19 August 2019

First Online: 9 September 2019

Competing Interests

: The authors declare that they have no competing interests.

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