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Voltage-Polarity Dependent Programming Behaviors of Amorphous In–Ga–Zn–O Thin-Film Transistor Memory with an Atomic-Layer-Deposited ZnO Charge Trapping Layer

Crossref DOI link: https://doi.org/10.1186/s11671-019-3204-7

Published Online: 2019-12-02

Published Print: 2019-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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