Demonstration of MOCVD-grown Ga2O3 power MOSFETs on sapphire with in-situ Si-doped by tetraethyl orthosilicate (TEOS)
Crossref DOI link: https://doi.org/10.1186/s11671-023-03858-w
Published Online: 2023-05-30
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Ngo, Sao Thien
Lu, Chan-Hung
Tarntair, Fu-Gow
Chung, Sheng-Ti
Wu, Tian-Li
Horng, Ray-Hua
Text and Data Mining valid from 2023-05-30
Version of Record valid from 2023-05-30
Article History
Received: 7 April 2023
Accepted: 25 May 2023
First Online: 30 May 2023
Declarations
:
: The authors declare no competing interests.