Schottky barrier memory based on heterojunction bandgap engineering for high-density and low-power retention
Crossref DOI link: https://doi.org/10.1186/s11671-024-04106-5
Published Online: 2024-10-07
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kim, Hyangwoo
Kim, Yijoon
Oh, Kyounghwan
Park, Ju Hong
Baek, Chang-Ki
Text and Data Mining valid from 2024-10-07
Version of Record valid from 2024-10-07
Article History
Received: 30 April 2024
Accepted: 9 September 2024
First Online: 7 October 2024
Declarations
:
: The authors declare no competing interests.