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Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors

Crossref DOI link: https://doi.org/10.1186/s40580-018-0135-4

Published Online: 2018-01-28

Published Print: 2018-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Ko, Eunah

Shin, Jaemin

Shin, Changhwan http://orcid.org/0000-0001-6057-3773
Funding

Funding for this research was provided by:

National Research Foundation of Korea (2017R1A2A2A05069708)

Korea Evaluation Institute of Industrial Technology (10067746)
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Article History

Received: 29 December 2017

Accepted: 11 January 2018

First Online: 28 January 2018