A quasi-ballistic drain current, charge and capacitance model with positional carrier scattering dependency valid for symmetric DG MOSFETs in nanoscale regime
Crossref DOI link: https://doi.org/10.1186/s40580-019-0189-y
Published Online: 2019-06-17
Published Print: 2019-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Murnal, Vyas R. http://orcid.org/0000-0001-7717-6723
Vijaya, C.
Text and Data Mining valid from 2019-06-17
Version of Record valid from 2019-06-17
Article History
Received: 23 January 2019
Accepted: 16 May 2019
First Online: 17 June 2019
Competing interests
: The authors declare that they have no competing interests.