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First Demonstration of Hysteresis-Free IGZO/SnO-Based Complementary Circuits and SRAM with Long-Term Reliability Using SU-8 Passivation

Published Online: 2025-10-31

Authors

Han, Changwoo

Park, Hyeonjung

Choi, Yejoo

Choi, Myeongjae

Lim, Jaehyuk

Shin, Huiseong

Moon, Seungjoon

Shin, Changhwan https://orcid.org/0000-0001-6057-3773
Funding

Funding for this research was provided by:

Ministry of Trade, Industry and Energy (2410012306, 02305570, 25069-15FC)

National Research Foundation of Korea (RS-2023-00260527)
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Text and Data Mining valid from 2025-10-31

Version of Record valid from 2025-10-31
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Article History

Received: 21 August 2025

Accepted: 4 October 2025

First Online: 31 October 2025

Declarations

:

: The authors declare that they have no competing interests.

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