The role of Si interstitials in the migration and growth of Ge nanocrystallites under thermal annealing in an oxidizing ambient
Crossref DOI link: https://doi.org/10.1186/1556-276X-9-339
Published Online: 2014-07-07
Published Print: 2014-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Chen, Kuan-Hung
Wang, Ching-Chi
George, Tom
Li, Pei-Wen
Article History
Received: 1 May 2014
Accepted: 27 June 2014
First Online: 7 July 2014