Beneficial defects: exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires
Crossref DOI link: https://doi.org/10.1186/1556-276X-9-358
Published Online: 2014-07-16
Published Print: 2014-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Persichetti, Luca
Sgarlata, Anna
Mori, Stefano
Notarianni, Marco
Cherubini, Valeria
Fanfoni, Massimo
Motta, Nunzio
Balzarotti, Adalberto
Text and Data Mining valid from 2014-07-16
Article History
Received: 3 April 2014
Accepted: 9 July 2014
First Online: 16 July 2014