Dielectric properties of porous silicon for use as a substrate for the on-chip integration of millimeter-wave devices in the frequency range 140 to 210 GHz
Crossref DOI link: https://doi.org/10.1186/1556-276X-9-418
Published Online: 2014-08-21
Published Print: 2014-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Sarafis, Panagiotis
Nassiopoulou, Androula Galiouna
Text and Data Mining valid from 2014-08-21
Article History
Received: 9 May 2014
Accepted: 15 July 2014
First Online: 21 August 2014