Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors
Crossref DOI link: https://doi.org/10.1186/1556-276X-9-590
Published Online: 2014-10-28
Published Print: 2014-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Li, Liuan
Nakamura, Ryosuke
Wang, Qingpeng
Jiang, Ying
Ao, Jin-Ping
Article History
Received: 30 June 2014
Accepted: 16 October 2014
First Online: 28 October 2014