Impact of device size and thickness of Al2O3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application
Crossref DOI link: https://doi.org/10.1186/1556-276X-9-692
Published Online: 2014-12-23
Published Print: 2014-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Panja, Rajeswar
Roy, Sourav
Jana, Debanjan
Maikap, Siddheswar
Article History
Received: 29 November 2014
Accepted: 8 December 2014
First Online: 23 December 2014