Electrical characteristic fluctuation of 16-nm-gate trapezoidal bulk FinFET devices with fixed top-fin width induced by random discrete dopants
Crossref DOI link: https://doi.org/10.1186/s11671-015-0739-0
Published Online: 2015-03-11
Published Print: 2015-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Huang, Wen-Tsung
Li, Yiming
License valid from 2015-03-11
Article History
Received: 25 October 2014
Accepted: 7 January 2015
First Online: 11 March 2015