Room-temperature electrically pumped near-infrared random lasing from high-quality m-plane ZnO-based metal-insulator-semiconductor devices
Crossref DOI link: https://doi.org/10.1186/s11671-015-0816-4
Published Online: 2015-03-01
Published Print: 2015-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Chen, Chao
Wang, Ti
Wu, Hao
Zheng, He
Wang, Jianbo
Xu, Yang
Liu, Chang
License valid from 2015-03-01
Article History
Received: 26 November 2014
Accepted: 12 February 2015
First Online: 1 March 2015