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Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications

Crossref DOI link: https://doi.org/10.1186/S11671-015-0846-Y

Published: 2015-12

Update policy: https://doi.org/10.1007/SPRINGER_CROSSMARK_POLICY

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