Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
Crossref DOI link: https://doi.org/10.1186/s11671-015-0846-y
Published Online: 2015-03-19
Published Print: 2015-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Wang, Lai-Guo
Qian, Xu
Cao, Yan-Qiang
Cao, Zheng-Yi
Fang, Guo-Yong
Li, Ai-Dong
Wu, Di
License valid from 2015-03-19
Article History
Received: 15 November 2014
Accepted: 2 March 2015
First Online: 19 March 2015