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Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications

Crossref DOI link: https://doi.org/10.1186/s11671-015-0846-y

Published Online: 2015-03-19

Published Print: 2015-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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