A Unique Approach to Generate Self-Aligned SiO2/Ge/SiO2/SiGe Gate-Stacking Heterostructures in a Single Fabrication Step
Crossref DOI link: https://doi.org/10.1186/s11671-015-0927-y
Published Online: 2015-05-19
Published Print: 2015-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Lai, Wei-Ting
Yang, Kuo-Ching
Hsu, Ting-Chia
Liao, Po-Hsiang
George, Thomas
Li, Pei-Wen
License valid from 2015-05-19
Article History
Received: 23 March 2015
Accepted: 8 May 2015
First Online: 19 May 2015