GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures
Crossref DOI link: https://doi.org/10.1186/s11671-015-1049-2
Published Online: 2015-08-25
Published Print: 2015-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Chen, Siming
Li, Wei
Zhang, Ziyang
Childs, David
Zhou, Kejia
Orchard, Jonathan
Kennedy, Ken
Hugues, Maxime
Clarke, Edmund
Ross, Ian
Wada, Osamu
Hogg, Richard
License valid from 2015-08-25