Leakage Current Mechanism of InN-Based Metal-Insulator-Semiconductor Structures with Al2O3 as Dielectric Layers
Crossref DOI link: https://doi.org/10.1186/s11671-016-1232-0
Published Online: 2016-01-13
Published Print: 2016-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Wang, X.
Zhang, G. Z.
Xu, Y.
Gan, X. W.
Chen, C.
Wang, Z.
Wang, Y.
Wang, J. L.
Wang, T.
Wu, H.
Liu, C.
Funding for this research was provided by:
National Natural Science Foundation of China (11175135, J1210061)
License valid from 2016-01-13