Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment
Crossref DOI link: https://doi.org/10.1186/s11671-016-1272-5
Published Online: 2016-02-01
Published Print: 2016-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Chen, Kai-Huang
Chang, Kuan-Chang
Chang, Ting-Chang
Tsai, Tsung-Ming
Liang, Shu-Ping
Young, Tai-Fa
Syu, Yong-En
Sze, Simon M.
Funding for this research was provided by:
National Science Council of the Republic of China (103-2633-E-272-001)
License valid from 2016-02-01