Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors
Crossref DOI link: https://doi.org/10.1186/s11671-016-1448-z
Published Online: 2016-04-30
Published Print: 2016-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Shih, Huan-Yu
Chu, Fu-Chuan
Das, Atanu
Lee, Chia-Yu
Chen, Ming-Jang
Lin, Ray-Ming
Funding for this research was provided by:
National Science Council (NSC-102-2221-E-182-060)
License valid from 2016-04-30