Surface Morphology Transformation Under High-Temperature Annealing of Ge Layers Deposited on Si(100)
Crossref DOI link: https://doi.org/10.1186/s11671-016-1588-1
Published Online: 2016-08-19
Published Print: 2016-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Shklyaev, A. A.
Latyshev, A. V.
Funding for this research was provided by:
Russian Science Foundation (RSF) (14-22-00143)
License valid from 2016-08-19