Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors
Crossref DOI link: https://doi.org/10.1186/s11671-017-1908-0
Published Online: 2017-02-16
Published Print: 2017-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Wang, Guilei
Luo, Jun
Qin, Changliang
Liang, Renrong
Xu, Yefeng
Liu, Jinbiao
Li, Junfeng
Yin, Huaxiang
Yan, Jiang
Zhu, Huilong
Xu, Jun
Zhao, Chao
Radamson, Henry H.
Ye, Tianchun
License valid from 2017-02-16