Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3 as the Oxidizers
Crossref DOI link: https://doi.org/10.1186/s11671-017-2024-x
Published Online: 2017-04-11
Published Print: 2017-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Zheng, Meijuan
Zhang, Guozhen
Wang, Xiao
Wan, Jiaxian
Wu, Hao
Liu, Chang
Funding for this research was provided by:
National Natural Science Foundation of China (11574235)
License valid from 2017-04-11