Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications
Crossref DOI link: https://doi.org/10.1186/s11671-017-2040-x
Published Online: 2017-04-13
Published Print: 2017-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Xu, Wenchao
Zhang, Yang
Tang, Zhenjie
Shao, Zhengjie
Zhou, Guofu
Qin, Minghui
Zeng, Min
Wu, Sujuan
Zhang, Zhang
Gao, Jinwei
Lu, Xubing
Liu, Junming
License valid from 2017-04-13