pMOSFETs Featuring ALD W Filling Metal Using SiH4 and B2H6 Precursors in 22 nm Node CMOS Technology
Crossref DOI link: https://doi.org/10.1186/s11671-017-2080-2
Published Online: 2017-04-26
Published Print: 2017-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Wang, Guilei
Luo, Jun
Liu, Jinbiao
Yang, Tao
Xu, Yefeng
Li, Junfeng
Yin, Huaxiang
Yan, Jiang
Zhu, Huilong
Zhao, Chao
Ye, Tianchun
Radamson, Henry H.
License valid from 2017-04-26