Efficient Carrier Injection, Transport, Relaxation, and Recombination Associated with a Stronger Carrier Localization and a Low Polarization Effect of Nonpolar m-plane InGaN/GaN Light-Emitting Diodes
Crossref DOI link: https://doi.org/10.1186/s11671-017-2087-8
Published Online: 2017-04-27
Published Print: 2017-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Yang, Fann-Wei
You, Yu-Siang
Feng, Shih-Wei http://orcid.org/0000-0002-6548-7468
Funding for this research was provided by:
Ministry of Science and Technology, Taiwan
License valid from 2017-04-27